IGBT Modules IGBT 1200V 300A
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Product : | IGBT Silicon Modules | Configuration : | Dual | ||
Collector- Emitter Voltage VCEO Max : | 1200 V | Collector-Emitter Saturation Voltage : | 1.75 V | ||
Continuous Collector Current at 25 C : | 450 A | Gate-Emitter Leakage Current : | 0.4 uA | ||
Power Dissipation : | 1.6 KW | Maximum Operating Temperature : | + 125 C |