IGBT Transistors 3300V 200A DUAL
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Configuration : | Dual | Collector- Emitter Voltage VCEO Max : | 3300 V |
Collector-Emitter Saturation Voltage : | 3.4 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Continuous Collector Current at 25 C : | 330 A | Gate-Emitter Leakage Current : | 400 nA |
Power Dissipation : | 2.2 KW | Maximum Operating Temperature : | + 125 C |
Package / Case : | IHM 73X140-8 |