FF200R12KE3

Packaging :
Gate-Emitter Leakage Current : 400 nA
Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 125 C
Collector- Emitter Voltage VCEO Max : 1200 V
Continuous Collector Current at 25 C : 200 A
Configuration : Dual
Collector-Emitter Saturation Voltage : 1.7 V
Package / Case : IS5a ( 62 mm )-7
Power Dissipation : 1.05 KW


Description

The FF200R12KE3 is designed as one kind of IGBT-Module device that has some points of electrical properties:(1)collector emitter voltage: 1200 V;(2)DC collector current: 295 A (Tc= 25°C) or 200 A (Tc= 80°C);(3)repetitive peak collector current: 400 A;(4)total power dissipation: 1050 W;(5)gate emitter peak voltage: +/- 20 V;(6)DC forward current: 300 A;(7)repetitive peak forward current: 600 A;(8)insulation test voltage: 2.5 kV.

The thermal properties of the FF200R12KE3 can be summarized as:(1)thermal resistance, junction to case DC (transistor inverter): 0.085 K/W;(2)thermal resistance, junction to case DC (diode inverter): 0.15 K/W;(3)thermal resistance, case to heatsink: 0.01 K/W;(4)maximum junction temperature: 150 ;(5)operation temperature: -40 to +125 ;(6)storage temperature:-40 to +125 . If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .