FDZ7296

MOSFET 30V N-Ch PowerTrench BGA MOSFET

product image

FDZ7296 Picture
SeekIC No. : 00151622 Detail

FDZ7296: MOSFET 30V N-Ch PowerTrench BGA MOSFET

floor Price/Ceiling Price

US $ .36~.72 / Piece | Get Latest Price
Part Number:
FDZ7296
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.72
  • $.6
  • $.48
  • $.36
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.0085 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : BGA-30 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.0085 Ohms
Package / Case : BGA-30


Features:

11 A, 30 V.  RDS(ON) = 8.5 m @ VGS = 10 V  RDS(ON) = 12 m @ VGS = 4.5 V  
 
 
Occupies only 0.10 cm of PCB area: 1/3 the area of SO-8.  

Ultra-thin package:  less than 0.80 mm height when mounted to PCB.  

High performance trench technology for extremely low RDS(ON)  

Optimized for low Qg and Qgd to enable fast switching and reduce CdV/dt gate coupling




Application

High-side Mosfet in DC-DC converters for Server and Notebook applications


Specifications

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

30

V

VGSS

Gate-Source Voltage

±20

V

ID

Drain Current Continuous (Note 1a)
Pulsed

11

A

20

PD

Power Dissipation (Steady State) (Note 1a)

2.1

W

TJ, TSTG

Operating and Storage Junction Temperature Range

55 to +150

°C




Description

Combining Fairchild's advanced PowerTrench process with  state-of-the-art BGA packaging, the  FDZ7296 minimizes both PCB space and  RDS(ON).    This BGA MOSFET  embodies a breakthrough in packaging technology which enables  the device to  combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON) .  




Parameters:

Technical/Catalog InformationFDZ7296
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs8.5 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 1520pF @ 15V
Power - Max2.1W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs31nC @ 10V
Package / CaseBGA
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDZ7296
FDZ7296
FDZ7296CT ND
FDZ7296CTND
FDZ7296CT



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Sensors, Transducers
Programmers, Development Systems
Integrated Circuits (ICs)
Hardware, Fasteners, Accessories
Motors, Solenoids, Driver Boards/Modules
Soldering, Desoldering, Rework Products
View more