MOSFET 30V/20V NCh MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 22 A | ||
Resistance Drain-Source RDS (on) : | 0.0029 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | BGA | Packaging : | Reel |
Symbol | Parameter | Ratings | Units |
VDSS | Drain-Source Voltage | 30 | V |
VGSS | Gate-Source Voltage | ±20 | |
ID | Drain Current Continuous (Note 1a) Pulsed |
22 | A |
PD | 75 | W | |
Total Power Dissipation @ TA = 25°C | 2.8 | ||
TJ, TSTG | Operating and Storage Junction Temperature Range | 50 to +150 |
Combining Fairchild's 30V PowerTrench process with state of the art BGA packaging, the FDZ5047N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON).
These MOSFETs FDZ5047N feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency.
Technical/Catalog Information | FDZ5047N |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 22A |
Rds On (Max) @ Id, Vgs | 2.9 mOhm @ 22A, 10V |
Input Capacitance (Ciss) @ Vds | 4993pF @ 15V |
Power - Max | 2.8W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 73nC @ 5V |
Package / Case | BGA |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDZ5047N FDZ5047N |