FDZ208P

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.0105 Ohms
Continuous Drain Current : 12.5 A
Package / Case : BGA


Features:

*  12.5 A, 30 V.  R_DS(ON) = 10.5 _m @ V_GS = 10 V R_DS(ON) = 16.5 m @ V_GS = 4.5 V
*  Occupies only 14 mm₂  of PCB area.  Only 42% of the area of SO-8
*  Ultra-thin package:  less than 0.8 mm height when mounted to PCB
*  3.5 x 4 mm²  footprint
*  High power and current handling capability

Application

*  Battery management 
*  Load switch
*  Battery protection


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	± 25	V
ID	Drain Current Continuous (Note 1a) Pulsed	12.5	A
		60
PD	Power Dissipation (Steady State) (Note 1a)	2.2	W
		1.0
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

Combining  Fairchild's  advanced  30  Volt  P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating  for  the  ultimate  low  Rds  Battery  Protection MOSFET.  This  MOSFET  FDZ208P also  embodies  a breakthrough in packaging technology  which enables the  device  to  combine  excellent  thermal  transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R_DS(ON) .  

Parameters:

Technical/Catalog Information	FDZ208P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	12.5A
Rds On (Max) @ Id, Vgs	10.5 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds	2409pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	35nC @ 5V
Package / Case	BGA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDZ208P FDZ208P