Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Packaging
: Reel
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: 20 V
Gate-Source Breakdown Voltage
: +/- 12 V
Continuous Drain Current
: 4.5 A
Package / Case
: TSSOP-8
Configuration
: Dual Dual Source
Resistance Drain-Source RDS (on)
: 32 m Ohms
Features: 4.5 A, 20 V. RDS(ON) = 32 m@ VGS = 4.5 V
RDS(ON) = 45 m@ VGS = 2.5 V
Optimized for use in battery circuit applications
Extended VGSS range (±10V) for battery applications
High performance trench technology for extremely low RDS(ON)
Low profile TSSOP-8 package
ApplicationBattery protection
Load switch
Power management
Pinout
Specifications
| Symbol |
Parameter |
Ratings |
Units |
| VDSS |
Drain-Source Voltage |
20 |
V |
| VGSS |
Gate-Source Voltage |
±10 |
V |
| ID |
Drain Current Continuous (Note 1a)
Pulsed |
4.5 |
A |
| 30 |
| PD |
Total Power Dissipation (Note 1a)
(Note 1b) |
1.0 |
W |
| 0.6 |
| TJ, TSTG |
Operating and Storage Junction Temperature Range |
55 to +150 |
|
DescriptionThis N-Channel 2.5V specified MOSFET FDW9926A is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. FDW9926A has been optimized for power
management applications with a wide range of gate drive voltage (2.5V 10V).
Parameters: | Technical/Catalog Information | FDW9926A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4.5A |
| Rds On (Max) @ Id, Vgs | 32 mOhm @ 4.5A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 630pF @ 10V |
| Power - Max | 600mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 9nC @ 4.5V |
| Package / Case | 8-TSSOP |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDW9926A
FDW9926A
|
FDW9926A Data Sheet
