FDSS2407

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 3.3 A
Drain-Source Breakdown Voltage : 62 V
Resistance Drain-Source RDS (on) : 132 m Ohms


Features:

62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8
5V Logic Level feedback signal of the drain to source voltage. Multiple devices can be wired "OR'd" to a single monitoring circuit input.
Gate Drive Disable Input. Multiple devices controll able bya single disable transistor.
Qualified to AEC Q101

Application

 Automotive Injector Driver
 Solenoid Driver


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	62	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TA = 25oC, VGS = 10V, RJA = 55oC/W)	3.3	A
	Continuous (TA = 25 C, VGS = 5V, RJA = 55 C/W)	3.0	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy ( Note 1)	140	mJ
PD	Power dissipation	2.27	W
	Derate above 25oC	18	mW/
TJ, TSTG	Operating and Storage Temperature	-55 to 150

Description

This FDSS2407 dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1 A drain to source voltage feedback signal and 2. A gate drive disable control function that previously required external discrete circuitry. Including these functions within the MOSFET saves printed circuit board space. The drain to source voltage feedback function provides a 5V level output
whenever the drain to source voltage is above 62V. This can monitor the time an inductive load takes to dissipate its stored energy. Multiple feedback signals can be wired "OR'd" together to a single input of the monitoring circuit. The gate disable function allows the device to be turned off independent of the drive signal on the gate. This function permits a second control circuit the ability to deactivate the load if necessary. FDSS2407 can also be wired "OR'd" allowing multiple devices to be controlled by a single open collector / drain control transistor.

Parameters:

Technical/Catalog Information	FDSS2407
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	62V
Current - Continuous Drain (Id) @ 25° C	3.3A
Rds On (Max) @ Id, Vgs	110 mOhm @ 3.3A, 10V
Input Capacitance (Ciss) @ Vds	300pF @ 15V
Power - Max	2.27W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4.3nC @ 5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDSS2407 FDSS2407