FDS8978

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 7.5 A
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.014 Ohms


Features:

􀂄 R_DS(ON) = 18m, V_GS = 10V, I_D = 7.5A
􀂄 R_DS(ON) = 21m, V_GS = 4.5V, I_D = 6.9A
􀂄 High performance trench technology for extremely low R_DS(ON)
􀂄 Low gate charge
􀂄 High power and current handling capability
􀂄 100% Rg Tested
􀂄 RoHS Compliant


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (TA = 25°C, VGS = 10V, RJA = 78°C/W)	7.5	A
	Continuous (TA = 25°C, VGS = 4.5V, RJA = 78°C/W)	6.9	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy	57	mJ
PD	Power dissipation	1.6	W
	Derate above 25°C	13	mW/°C
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS8978 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_DS(ON) and fast switching speed.


Parameters:

Technical/Catalog Information	FDS8978
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	7.5A
Rds On (Max) @ Id, Vgs	18 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds	907pF @ 15V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	26nC @ 10V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS8978 FDS8978