FDS8962C

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 7 A, - 5 A
Resistance Drain-Source RDS (on) : 21 mOhms, 42 mOhms


Features:

Q1: N-Channel
   7.0A, 30V R_DS(on) = 0.030 @ V_GS = 10V
                   R_DS(on) = 0.044 @ V_GS = 4.5V
Q2: P-Channel
   -5A, -30V R_DS(on) = 0.052 @ V_GS = -10V
                   R_DS(on) = 0.080 @ V_GS = -4.5V
Fast switching speed
High power and handling capability in a widely used surface mount package

Pinout




Specifications

Symbol	Parameter		Q1	Q2	Units
VDSS	Drain-Source Voltage		30	30	V
VGSS	Gate-Source Voltage		±20	±20
ID	Drain Current	Continuous (Note 1a) Pulsed	7	-5	A
			20	-20
PD	Power Dissipation for Dual Operation		2		W
	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)	1.6
			1
			0.9
TJ, TSTG	Operating and Storage Junction Temperature Range		55 to +150		°C

Description

These FDS8962C dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.These devices FDS8962C are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parameters:

Technical/Catalog Information	FDS8962C
Vendor	Fairchild Semiconductor (VA)
Category	Undefined Category
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS8962C FDS8962C FDS8962CDKR ND FDS8962CDKRND FDS8962CDKR