FDS8960C

MOSFET 35V Dual N & P-Chl PwrTrnch #174 MOSFET

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SeekIC No. : 00157086 Detail

FDS8960C: MOSFET 35V Dual N & P-Chl PwrTrnch #174 MOSFET

floor Price/Ceiling Price

US $ .31~.31 / Piece | Get Latest Price
Part Number:
FDS8960C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1840
  • 1840~2500
  • Unit Price
  • $.31
  • $.31
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/18

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : +/- 35 V
Gate-Source Breakdown Voltage : +/- 20 V, +/- 25 V Continuous Drain Current : 7 A, - 5 A
Resistance Drain-Source RDS (on) : 20 mOhms, 44 mOhms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 7 A, - 5 A
Gate-Source Breakdown Voltage : +/- 20 V, +/- 25 V
Drain-Source Breakdown Voltage : +/- 35 V
Resistance Drain-Source RDS (on) : 20 mOhms, 44 mOhms


Features:

Q1: N-Channel
   7.0A, 35V RDS(on) = 0.024 @ VGS = 10V
                   RDS(on) = 0.032 @ VGS = 4.5V
Q2: P-Channel
   5A, 35V RDS(on) = 0.053 @ VGS = 10V
                     RDS(on) = 0.087 @ VGS = 4.5V
Fast switching speed
RoHS compliant



Pinout

  Connection Diagram


Specifications

Symbol Parameter
Ratings
Units
Q1
Q2
VDSS Drain-Source Voltage
35
-35
V
VGSS Gate-Source Voltage
±20
±25
ID
Drain Current
Continuous (Note 1a)
Pulsed
7
-5
A
20
-20
PD

Power Dissipation for Dual Operation

2
W
Power Dissipation for Single Operation

(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, TSTG Operating and Storage Junction Temperature Range
55 to +150
°C



Description

These FDS8960C dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.These devices FDS8960C are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




Parameters:

Technical/Catalog InformationFDS8960C
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)35V
Current - Continuous Drain (Id) @ 25° C7A, 5A
Rds On (Max) @ Id, Vgs24 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 570pF @ 15V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs7.7nC @ 5V
Package / CaseSO-8
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS8960C
FDS8960C
FDS8960CTR ND
FDS8960CTRND
FDS8960CTR



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