FDS8958

MOSFET 30V Dual N & P-Ch PowerTrench MOSFET

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FDS8958 Picture
SeekIC No. : 00159670 Detail

FDS8958: MOSFET 30V Dual N & P-Ch PowerTrench MOSFET

floor Price/Ceiling Price

Part Number:
FDS8958
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/18

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 7 A, - 5 A
Resistance Drain-Source RDS (on) : 0.028 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.028 Ohms
Continuous Drain Current : 7 A, - 5 A


Features:

Q1: N-Channel
   7.0A, 30V RDS(on) = 0.028 @ VGS = 10V
                   RDS(on) = 0.040 @ VGS = 4.5V
Q2: P-Channel
   -5A, -30V RDS(on) = 0.052 @ VGS = -10V
                   RDS(on) = 0.080 @ VGS = -4.5V
Fast switching speed
High power and handling capability in a widely used surface mount package



Pinout

  Connection Diagram


Specifications

Symbol Parameter
Ratings
Units
Q1
Q2
VDSS Drain-Source Voltage
30
30 
V
VGSS Gate-Source Voltage
±20
±20
ID
Drain Current
Continuous (Note 1a)
Pulsed
7
-5
A
20
-20
PD

Power Dissipation for Dual Operation

2
W
Power Dissipation for Single Operation

(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, TSTG Operating and Storage Junction Temperature Range
55 to +150
°C



Description

These FDS8958 dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices FDS8958 are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




Parameters:

Technical/Catalog InformationFDS8958
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C7A, 5A
Rds On (Max) @ Id, Vgs28 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 789pF @ 10V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs26nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS8958
FDS8958



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