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FDS8936S

Features: Low gate charge. 5.0 A, 30 V. RDS(ON) = 0.040 @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.PinoutSpecifications Symbol Parameter Ratings...

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SeekIC No. : 004341125 Detail

FDS8936S: Features: Low gate charge. 5.0 A, 30 V. RDS(ON) = 0.040 @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount ...

FDS8936S Data Sheet

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Part Number:
FDS8936S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

Low gate charge.
5.0 A, 30 V. RDS(ON) = 0.040 @ VGS = 10 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package.


Pinout

Connection Diagram


Specifications

Symbol Parameter
Ratings
Units
VDSS Drain-Source Voltage
30
V
VGSS Gate-Source Voltage
±20
ID
 Drain Current
Continuous (Note 1a)
Pulsed
5
A
20
PD

Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation

 (Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, TSTG Operating and Storage Junction Temperature Range
55 to +150
°C



Description

SO-8 N-Channel enhancement mode power field effect transistors FDS8936S are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices FDS8936S are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




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