FDS8936A

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.028 Ohms


Features:

6 A, 30 V. R_DS(ON) = 0.028 @ V_GS = 10 V,
                   R_DS(ON) = 0.040 @ V_GS = 4.5 V.
High density cell design for extremely low R_DS(ON) .
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package.


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS	Drain-Source Voltage		30	V
VGSS	Gate-Source Voltage		±20
ID	Drain Current	Continuous (Note 1a) Pulsed	6	A
			20
PD	Power Dissipation for Dual Operation		2	W
	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)	1.6
			1
			0.9
TJ, TSTG	Operating and Storage Junction Temperature Range		55 to +150	°C

Description

SO-8 N-Channel enhancement mode power field effect transistors FDS8936A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss,and resistance to transients are needed.