FDS8928A

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : + 30 V / - 20 V
Continuous Drain Current : 5.5 A, - 4 A
Resistance Drain-Source RDS (on) : 25 mOhms, 43 mOhms


Features:

N-Channel 5.5 A,30 V, R_DS(ON) =0.030 @ V_GS=4.5 V
                                      R_DS(ON) =0.038 @ V_GS=2.5 V.
  P-Channel -4 A,-20 V, R_DS(ON) =0.055 @ V_GS=-4.5 V
                                     R_DS(ON) =0.072 @ V_GS=-2.5 V.
High density cell design for extremely low R_DS(ON) .
High power and current handling capability in a widely used surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.


Pinout




Specifications

Symbol	Parameter		N-Channel	P-Channel	Units
VDSS	Drain-Source Voltage		30	-20	V
VGSS	Gate-Source Voltage		8	-8
ID	Drain Current	Continuous (Note 1a) Pulsed	5.5	-4	A
			20	-20
PD	Power Dissipation for Dual Operation		2		W
	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)	1.6
			1
			0.9
TJ, TSTG	Operating and Storage Junction Temperature Range		55 to +150		°C

Description

These dual N- and P -Channel enhancement mode power field effect transistors FDS8928A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices FDS8928A are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to
transients are needed.

Parameters:

Technical/Catalog Information	FDS8928A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V, 20V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	30 mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) @ Vds	900pF @ 10V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	28nC @ 4.5V
Package / Case	SO-8
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS8928A FDS8928A FDS8928ATR ND FDS8928ATRND FDS8928ATR