MOSFET SO-8 DUAL N-CH 30V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 5.5 A | ||
Resistance Drain-Source RDS (on) : | 0.03 Ohms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Symbol | Parameter |
Ratings |
Units | |
VDSS | Drain-Source Voltage |
30 |
V | |
VGSS | Gate-Source Voltage |
±8 | ||
ID |
Drain Current |
Continuous (Note 1a) Pulsed |
5.5 |
A |
20 | ||||
PD |
Power Dissipation for Dual Operation |
2 |
W | |
Power Dissipation for Single Operation |
(Note 1a) (Note 1b) (Note 1c) |
1.6 | ||
1 | ||||
0.9 | ||||
TJ, TSTG | Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
SO-8 N-Channel enhancement mode power field effect transistors FDS8926A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices FDS8926A are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Technical/Catalog Information | FDS8926A |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 5.5A |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 5.5A, 4.5V |
Input Capacitance (Ciss) @ Vds | 900pF @ 10V |
Power - Max | 2W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 28nC @ 4.5V |
Package / Case | SO-8 |
FET Feature | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS8926A FDS8926A FDS8926ACT ND FDS8926ACTND FDS8926ACT |