FDS8926A

MOSFET SO-8 DUAL N-CH 30V

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SeekIC No. : 00159776 Detail

FDS8926A: MOSFET SO-8 DUAL N-CH 30V

floor Price/Ceiling Price

Part Number:
FDS8926A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 5.5 A
Resistance Drain-Source RDS (on) : 0.03 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Dual Dual Drain
Continuous Drain Current : 5.5 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.03 Ohms


Features:

5.5 A, 30 V. RDS(ON) = 0.030 @ VGS = 4.5 V
                      RDS(ON) = 0.038 @ VGS = 2.5 V.
High density cell design for extremely low RDS(ON).
Combines low gate threshold (fully enhanced at 2.5V) with high breakdown voltage of 30 V.
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package.



Pinout

  Connection Diagram


Specifications

Symbol Parameter
Ratings
Units
VDSS Drain-Source Voltage
30
V
VGSS Gate-Source Voltage
±8
ID
Drain Current
Continuous (Note 1a)
Pulsed
5.5
A
20
PD

Power Dissipation for Dual Operation

2
W
Power Dissipation for Single Operation

(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, TSTG Operating and Storage Junction Temperature Range
55 to +150
°C



Description

SO-8 N-Channel enhancement mode power field effect transistors FDS8926A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices FDS8926A are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationFDS8926A
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5.5A
Rds On (Max) @ Id, Vgs30 mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) @ Vds 900pF @ 10V
Power - Max2W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs28nC @ 4.5V
Package / CaseSO-8
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS8926A
FDS8926A
FDS8926ACT ND
FDS8926ACTND
FDS8926ACT



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