MOSFET 30V N-Ch PowerTrench MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 11.6 A | ||
Resistance Drain-Source RDS (on) : | 0.01 Ohms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Symbol | Parameter | Ratings | Units |
VDSS | Drain-Source Voltage | 30 | V |
VGSS | Gate-Source Voltage | ± 20 | V |
ID | Drain Current Continuous (T = 25oC, V = 10V, R = 50/W) |
11.6 | A |
Continuous (TA = 25oC, VGS = 4.5V, RJA = 50/W) | 10.7 | A | |
Pulsed | Figure 4 | A | |
EAS | Single Pulse Avalanche Energy (Note 1) |
82 | mJ |
PD | Power dissipation | 2.5 | W |
Derate above 25oC | 20 | mW/ | |
TJ, TSTG | Operating and Storage Temperature | -55 to +150 |
This FDS8880 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Technical/Catalog Information | FDS8880 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 11.6A |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 11.6A, 10V |
Input Capacitance (Ciss) @ Vds | 1235pF @ 15V |
Power - Max | 2.5W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 30nC @ 10V |
Package / Case | SO-8 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS8880 FDS8880 FDS8880TR ND FDS8880TRND FDS8880TR |