FDS8880

MOSFET 30V N-Ch PowerTrench MOSFET

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SeekIC No. : 00148573 Detail

FDS8880: MOSFET 30V N-Ch PowerTrench MOSFET

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US $ .23~.4 / Piece | Get Latest Price
Part Number:
FDS8880
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 11.6 A
Resistance Drain-Source RDS (on) : 0.01 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 11.6 A
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

r DS(ON)= 10mΩ , VGS= 10V, ID = 11.6A
rDS(ON)= 12mΩ , VGS = 4.5V, ID = 10.7A
High performance trench technology for extremely low rDS(ON) 
Low gate charge
High power and current handling capability



Application

DC/DC converters


Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ± 20 V
ID Drain Current
Continuous (T = 25oC, V = 10V, R = 50/W)
11.6 A
Continuous (TA = 25oC, VGS = 4.5V, RJA = 50/W) 10.7 A
Pulsed Figure 4 A
EAS Single Pulse Avalanche Energy (Note 1)
82 mJ
PD Power dissipation 2.5 W
Derate above 25oC 20 mW/
TJ, TSTG Operating and Storage Temperature -55 to +150



Description

This FDS8880 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.




Parameters:

Technical/Catalog InformationFDS8880
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C11.6A
Rds On (Max) @ Id, Vgs10 mOhm @ 11.6A, 10V
Input Capacitance (Ciss) @ Vds 1235pF @ 15V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseSO-8
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS8880
FDS8880
FDS8880TR ND
FDS8880TRND
FDS8880TR



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