FDS8874

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 16 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.0049 Ohms


Features:

r_DS(ON) = 5.5mΩ, V_GS = 10V, I_D = 16A
r_DS(ON) = 7.0mΩ, V_GS = 4.5V, I_D = 15A
High performance trench technology for extremely lowrDS(ON) Low gate charge
High power and current handling capability
100% Rg tested
RoHS Compliant


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	30	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TA = 25oC, VGS = 10V, RJA = 50/W)	16	A
	Continuous (TA = 25 C, VGS = 5V, RJA = 55 /W)	15	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy ( Note 1)	265	mJ
PD	Power dissipation	2.5	W
	Derate above 25oC	20	mW/oC
TJ, TSTG	Operating and Storage Temperature	-55 to 150	oC

Description

This FDS8874 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for low gate charge, low  r_DS(ON) and fast switching speed.


Parameters:

Technical/Catalog Information	FDS8874
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	5.5 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	3990pF @ 15V
Power - Max	2.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	72nC @ 10V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS8874 FDS8874 FDS8874CT ND FDS8874CTND FDS8874CT