FDS8870

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 18 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.0042 Ohms


Features:

r _DS(ON)= 4.2mΩ , V_GS = 10V, I_D = 18A
r _DS(ON = 4.9mΩ, V_GS = 4.5V, I_D = 17A
High performance trench technology for extremely low r_DS(ON) 
Low gate charge
High power and current handling capability


Application

 DC/DC converters


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	30	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TA = 25oC, VGS = 10V, RJA = 55oC/W)	18	A
	Continuous (TA = 25 C, VGS = 5V, RJA = 55 C/W)	17	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy ( Note 1)	420	mJ
PD	Power dissipation	2.5	W
	Derate above 25oC	20	mW/oC
TJ, TSTG	Operating and Storage Temperature	-55 to 150	oC

Description

This FDS8870 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM,controllers.  It has been optimized for low gate charge, low r_DS(ON)and fast switching speed.


Parameters:

Technical/Catalog Information	FDS8870
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	4.2 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	4615pF @ 15V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	112nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS8870 FDS8870