FDS8670

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 21 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 3.3 m Ohms


Features:

• 21 A, 30 V Max R_DS(ON) = 3.7 mΩ @ V_GS = 10 V
                    Max R_DS(ON) = 5.0 mΩ @ V_GS = 4.5 V
• High performance trench technology for extremely low R_DS(ON) and gate charge
• Minimal Qgd (5.5 nC typical)
• 100% R_G tested (0.9 Ω typical)
• RoHS Compliant


Application

• High Efficiency DC-DC Converters:
• Notebook Vcore Power Supply
• Telecom Brick Synchronous Rectifier
• Multi purpose Point Of Load


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±16	V
ID	Drain Current Continuous (Note 1a)                        Pulsed	21	A
		105
PD	Power Dissipation for Single Operation (Note 1a)                                                               (Note 1b)                                                               (Note 1c)	2.5	W
		1.2
		1.0
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS8670 device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low Rds(on) has been maintained to provide an extremely versatile device.


Parameters:

Technical/Catalog Information	FDS8670
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	3.7 mOhm @ 21A, 10V
Input Capacitance (Ciss) @ Vds	4040pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	82nC @ 10V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS8670 FDS8670 FDS8670TR ND FDS8670TRND FDS8670TR