FDS7788

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 18 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.003 Ohms


Features:

• 18 A, 30 V. R_DS(ON) = 4.0 mΩ @ V_GS = 10 V
                     R_DS(ON) = 5.0 mΩ @ V_GS = 4.5 V
• Low gate charge
• Fast switching speed
• High power and current handling capability
• High performance trench technology for extremely low R_DS(ON)


Application

• DC/DC converter
• Load switch
• Motor drives


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 1a)                         Pulsed	18	A
		50
PD	Power Dissipation for Single Operation (Note 1a)                                                               (Note 1b)                                                               (Note 1c)	2.5	W
		1.2
		1.0
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS7788 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low R_DS(ON) in a small package.


Parameters:

Technical/Catalog Information	FDS7788
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	4 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	3845pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	48nC @ 5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS7788 FDS7788