FDS7764S

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 13.5 A
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.0075 Ohms


Features:

• 13.5 A, 30 V. RDS(ON) = 7.5 m @ VGS = 10 V
                        RDS(ON) = 9.0 m @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (25 nC typical)
• High performance trench technology for extremely low RDS(ON) and fast switching
• High power and current handling capability



Application

• DC/DC converter
• Motor drives


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	+16	V
ID	Draint Current - Continuous (Note 1)	13.5	A
	- Pulsed	50
PD	Power Dissipation for Single Operation (Note 1a)	2.5	W
	(Note 1b)	1.2
	(Note 1c)	1.0
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +125	°C

Description

The FDS7764S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7764S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.

Parameters:

Technical/Catalog Information	FDS7764S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	13.5A
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 13.5A, 10V
Input Capacitance (Ciss) @ Vds	2800pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	35nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS7764S FDS7764S