FDS7760A

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 15 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 4.5 m Ohms


Features:

•  15 A, 30 V. R_DS(ON)   = 5.5 mΩ @ V_GS = 10 V
                      R_DS(ON)   = 8 mΩ @ V_GS = 4.5 V.
•  Low gate charge (37nC typical)
• Fast switching speed.
•  High performance trench technology for extremely low R_DS(ON)
•  High power and current handling capability.


Application

• DC/DC converter
• Load switch
• Motor drives


Pinout




Specifications

Symbol	Parameter	FDS8433A	Units
VDSS	Drain-Source Voltage	-30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	15	A
		60
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This FDS7760A N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices FDS7760A are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parameters:

Technical/Catalog Information	FDS7760A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	5.5 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	3514pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	55nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS7760A FDS7760A