FDS7096N3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8
Configuration : Single Triple Source
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.009 Ohms


Features:

• 14 A, 30 V R_DS(ON) = 9 mΩ @ V_GS = 10 V
                    R_DS(ON) = 12 mΩ @ V_GS = 4.5 V
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size


Application

• DC/DC converter
• Power management
• Load switch


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 1a)                        Pulsed	14	A
		60
PD	Power Dissipation for Single Operation (Note 1a)                                                              (Note 1b)	3.0	W
		1.5
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS7096N3 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_DS(ON) and fast switching speed.


Parameters:

Technical/Catalog Information	FDS7096N3
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	9 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds	1587pF @ 15V
Power - Max	1.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	22nC @ 5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS7096N3 FDS7096N3 FDS7096N3CT ND FDS7096N3CTND FDS7096N3CT