FDS7066SN3

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8
Configuration : Single Triple Source
Continuous Drain Current : 19 A
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.0055 Ohms


Features:

• 19 A, 30 V RDS(ON) = 5.5 m @ VGS = 10 V
                        S(ON) = 6.0 m @ VGS = 4.5 V
• High performance trench technology for extremely ow RDS(ON)
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal erformance in industry-standard package size


Application

• DC/DC converter
• Motor drivesFeatures


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	+16	V
ID	Draint Current - Continuous (Note 1)	19	A
	- Pulsed	60
PD	Power Dissipation for Single Operation (Note 1a)	3.0	W
	(Note 1b)	1.7
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

The FDS7066SN3 is designed to replace a single SO-8 LMP MOSFET and Schottky diode in synchronous C:DC power supplies. This 30V MOSFET is designed o maximize power conversion efficiency, providing a ow RDS(ON) and low gate charge. The FDS7066SN3 ncludes an integrated Schottky diode using Fairchild's onolithic SyncFET technology. The performance of he FDS7066SN3 as the low-side switch in a ynchronous rectifier is close to the performance of the DS7066N3 in parallel with a Schottky diode.