FDS7066ASN3

MOSFET 30V N-Channel PowerTrench

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SeekIC No. : 00161037 Detail

FDS7066ASN3: MOSFET 30V N-Channel PowerTrench

floor Price/Ceiling Price

Part Number:
FDS7066ASN3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.0048 Ohms Configuration : Single Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8
Configuration : Single Triple Source
Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.0048 Ohms


Features:

• 19 A, 30 V RDS(ON) = 4.8 m @ VGS = 10 V
                    RDS(ON) = 6.0 m @ VGS = 4.5 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size



Application

• DC/DC converter


Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
+20
V
ID
Draint Current - Continuous (Note 1)
19
A
- Pulsed
60
PD
Power Dissipation for Single Operation (Note 1a)
3.0
W
(Note 1b)
1.7
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +125
°C



Description

The FDS7066ASN3 is designed to replace a single SO- 8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7066ASN3 includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDS7066ASN3 as the low-side switch in a synchronous rectifier is close to the performance of the FDS7066N3 in parallel with a Schottky diode.




Parameters:

Technical/Catalog InformationFDS7066ASN3
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C19A
Rds On (Max) @ Id, Vgs4.8 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds 2460pF @ 15V
Power - Max1.7W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs62nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS7066ASN3
FDS7066ASN3
FDS7066ASN3DKR ND
FDS7066ASN3DKRND
FDS7066ASN3DKR



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