FDS7064SN3

MOSFET 30V N-Ch PowerTrench

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FDS7064SN3 Picture
SeekIC No. : 00161174 Detail

FDS7064SN3: MOSFET 30V N-Ch PowerTrench

floor Price/Ceiling Price

Part Number:
FDS7064SN3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 0.008 Ohms Configuration : Single Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8
Continuous Drain Current : 16 A
Configuration : Single Triple Source
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.008 Ohms


Features:

• 16 A,    30 V   RDS(ON) = 8.0 mΩ @ VGS = 10 V
                         RDS(ON) = 9.5 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely low RDS(ON)
• No inductance between MOSFET and Schottky
• 40% reduction in Body Diode Forward Voltage
• Optimized to reduce losses in Synchronous Buck Regulators
• FLMP SO-8 package for enhanced thermal performance.



Application

• Synchronous Rectifier


Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS Drain-Source Voltage
30
V
VGSS Gate-Source Voltage
±16
V
ID Drain Current - Continuous (Note 1a)
- Pulsed
16
A
60
PD Power Dissipation for Single Operation (Note 1a)
(Note 1b)
3.13
W
1.5
TJ, TSTG Operating and Storage Junction Temperature Range
-55to+150
°C



Description

The FDS7064SN3 is designed to improve the efficiency of Buck Regulators. Used as the Synchronous rectifier, (Low side MOSFET), losses can be reduced, not only in this device, but also in the Control switch, (High side MOSFET). After the low side MOSFET turns off, reverse recovery current in the body diode is dissipated in the High Side device. A Discrete Schottky diode in parallel with the Low Side MOSFET can lower the reverse recovery current, but parasitic PCB and Package Inductance reduce the effectiveness of the Schottky. SyncFETTM technology reduces this inductance to a minimum by providing a monolithic solution (MOSFET and Schottky in the same die), resulting in optimum performance.




Parameters:

Technical/Catalog InformationFDS7064SN3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs8 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 2800pF @ 15V
Power - Max1.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs35nC @ 5V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS7064SN3
FDS7064SN3
FDS7064SN3TR ND
FDS7064SN3TRND
FDS7064SN3TR



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