MOSFET 30V DUAL N-CH. FET 18 MO SO8
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 7.5 A | ||
Resistance Drain-Source RDS (on) : | 0.017 Ohms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SO-8 | Packaging : | Reel |
Technical/Catalog Information | FDS6990AS |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 7.5A |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 7.5A, 10V |
Input Capacitance (Ciss) @ Vds | 550pF @ 15V |
Power - Max | 900mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 14nC @ 5V |
Package / Case | 8-SOIC |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS6990AS FDS6990AS FDS6990ASDKR ND FDS6990ASDKRND FDS6990ASDKR |