FDS6982

MOSFET SO-8 N-CH 1&2 30V

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SeekIC No. : 00161585 Detail

FDS6982: MOSFET SO-8 N-CH 1&2 30V

floor Price/Ceiling Price

Part Number:
FDS6982
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6.3 A, 8.6 A
Resistance Drain-Source RDS (on) : 0.015 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.015 Ohms
Continuous Drain Current : 6.3 A, 8.6 A


Features:

• Q2: 8.6A, 30V.   R DS(on) = 0.015 Ω @ VGS = 10V
                            R DS(on) = 0.020 Ω @ VGS = 4.5V
• Q1: 6.3A, 30V.   R DS(on) = 0.028 Ω @ VGS = 10V
                            R DS(on) = 0.035 Ω @ VGS = 4.5V
• Fast switching speed.
• Low gate charge (Q1 typical = 8.5nC).
• High performance trench technology for extremely
    low RDS(ON)
.



Application

• Battery powered synchronous DC:DC converters.
• Embedded DC:DC conversion.



Pinout

  Connection Diagram


Specifications

Symbol Parameter Q2 Q1 Units
VDSS Drain-Source Voltage 30 30 V
VGSS Gate-Source Voltage ±20 ±16 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
8.6 6.3 A
30 20
PD Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)

1.6
1
0.9
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C



Description

This part is designed to replace two single SO-8  MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, PowerTrenchTM MOSFETs designed to maximize power conversion efficiency.

The FDS6982 high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized for low conduction (less than 20mΩ at VGS = 4.5V).




Parameters:

Technical/Catalog InformationFDS6982
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C8.6A, 6.3A
Rds On (Max) @ Id, Vgs15 mOhm @ 8.6A, 10V
Input Capacitance (Ciss) @ Vds 760pF @ 10V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs12nC @ 5V
Package / CaseSO-8
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6982
FDS6982
FDS6982TR ND
FDS6982TRND
FDS6982TR



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