MOSFET SO-8 N-CH 1&2 30V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 6.3 A, 8.6 A | ||
Resistance Drain-Source RDS (on) : | 0.015 Ohms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Symbol | Parameter | Q2 | Q1 | Units |
VDSS | Drain-Source Voltage | 30 | 30 | V |
VGSS | Gate-Source Voltage | ±20 | ±16 | V |
ID | Drain Current - Continuous (Note 1a) - Pulsed |
8.6 | 6.3 | A |
30 | 20 | |||
PD | Power Dissipation for Dual Operation | 2 | W | |
Power Dissipation for Single Operation |
1.6 | |||
1 | ||||
0.9 | ||||
TJ, TSTG | Operating and Storage Junction Temperature Range | -55 to +150 | °C |
This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, PowerTrenchTM MOSFETs designed to maximize power conversion efficiency.
The FDS6982 high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized for low conduction (less than 20mΩ at VGS = 4.5V).
Technical/Catalog Information | FDS6982 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 8.6A, 6.3A |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 8.6A, 10V |
Input Capacitance (Ciss) @ Vds | 760pF @ 10V |
Power - Max | 2W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 12nC @ 5V |
Package / Case | SO-8 |
FET Feature | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS6982 FDS6982 FDS6982TR ND FDS6982TRND FDS6982TR |