FDS6975

MOSFET SO-8 DUAL P-CH -30V

product image

FDS6975 Picture
SeekIC No. : 00149316 Detail

FDS6975: MOSFET SO-8 DUAL P-CH -30V

floor Price/Ceiling Price

US $ .46~.75 / Piece | Get Latest Price
Part Number:
FDS6975
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.75
  • $.67
  • $.54
  • $.46
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 0.032 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Drain-Source Breakdown Voltage : - 30 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.032 Ohms


Features:

-6 A, -30 V. = 0.032 W  @ VGS = -10 V,R DS(ON)              
                   = 0.045 W  @ VGS = -4.5 V.R DS(ON)
Low gate charge (14.5nC typical).
High performance trench technology for extremely low RDS(ON)
High power and current handling capability.



Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
-6 A
-20
PD Power Dissipation for Dual Operation (Note 1)
2 W
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 W
Thermal Characteristics      
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
78 °C/W
40
       



Description

These FDS6975 P-Channel  Logic   Level  MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices FDS6975 are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.




Parameters:

Technical/Catalog InformationFDS6975
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs32 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 1540pF @ 15V
Power - Max2W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs20nC @ 5V
Package / CaseSO-8
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6975
FDS6975
FDS6975CT ND
FDS6975CTND
FDS6975CT



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Sensors, Transducers
Undefined Category
Batteries, Chargers, Holders
Line Protection, Backups
Crystals and Oscillators
Circuit Protection
View more