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FDS6961A_F011: MOSFET Dual NCh PowerTrench Logic Level

FDS6961A_F011 Data Sheet

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Part Number:: FDS6961A_F011
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/5/22

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	3.5 A
Resistance Drain-Source RDS (on) :	0.09 Ohms	Configuration :	Dual Dual Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOIC-8 Narrow	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.09 Ohms
Continuous Drain Current : 3.5 A

Parameters:

Technical/Catalog Information	FDS6961A_F011
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	3.5A
Rds On (Max) @ Id, Vgs	90 mOhm @ 3.5, 10V
Input Capacitance (Ciss) @ Vds	220pF @ 15V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4nC @ 5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6961A_F011 FDS6961A_F011

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