FDS6930A

MOSFET SO-8 DUAL N-CH

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SeekIC No. : 00161950 Detail

FDS6930A: MOSFET SO-8 DUAL N-CH

floor Price/Ceiling Price

Part Number:
FDS6930A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5.5 A
Resistance Drain-Source RDS (on) : 0.04 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Continuous Drain Current : 5.5 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.04 Ohms


Features:

5.5 A, 30 V. RDS(ON) = 0.040 W  @ VGS = 10 V                 
                   RDS(ON) = 0.055 W  @ VGS = 4.5 V.
Fast switching speed.
Low gate charge (typical 5 nC).
High performance trench technology for extremely lowRDS(ON).
High power and current handling capability.



Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
5.5 A
20
PD Power Dissipation for Dual Operation (Note 1)
2 W
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 W
Thermal Characteristics      
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
78 °C/W
40
       



Description

These  FDS6930A N-Channel   Logic   Level  MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices FDS6930A are well suited for low voltage and battery powered applications   where low in-line power loss and fast switching  are required.




Parameters:

Technical/Catalog InformationFDS6930A
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5.5A
Rds On (Max) @ Id, Vgs40 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds 460pF @ 15V
Power - Max2W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs7nC @ 5V
Package / CaseSO-8
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6930A
FDS6930A
FDS6930ACT ND
FDS6930ACTND
FDS6930ACT



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