FDS6912A

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.028 Ohms


Features:

6 A, 30 V. R_DS(ON) = 0.028 @ V_GS = 10 V
                   R_DS(ON) = 0.035 @ V_GS = 4.5 V.
Fast switching speed.
Low gate charge (typical 9 nC).
High performance trench technology for extremely low R_{DS(ON) .}
High power and current handling capability.


Pinout




Specifications

Symbol	Parameter		FDS6912A	Units
VDSS	Drain-Source Voltage		30	V
VGSS	Gate-Source Voltage		±20
ID	Drain Current	Continuous (Note 1a) Pulsed	6	A
			20
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)	2	W
			1.6
			0.9
TJ, TSTG	Operating and Storage Junction Temperature Range		55 to +150	°C

Description

These FDS6912A N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices FDS6912A are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parameters:

Technical/Catalog Information	FDS6912A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	28 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	575pF @ 15V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	8.1nC @ 5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6912A FDS6912A FDS6912ATR ND FDS6912ATRND FDS6912ATR