FDS6900S

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : 10 V
Resistance Drain-Source RDS (on) : 0.03 Ohms
Continuous Drain Current : 6.9 A


Features:

• Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode
   8.2A, 30V   R_DS(on) = 22mΩ @ V_GS = 10V
                     R_DS(on) = 29mΩ @ V_GS = 4.5V
• Q1: Optimized for low switching losses Low Gate Charge ( 8 nC typical)
   6.9A, 30V   R_DS(on) = 30mΩ @ V_GS = 10V
                     R_DS(on) = 37mΩ @ V_GS = 4.5V


Specifications

Symbol	Parameter	Q2	Q1	Units
VDSS	Drain-Source Voltage	30	30	V
VGS	Gate-Source Voltage	±20	±20	V
ID	Drain Current Continuous (Note 1a)                         Pulsed	8.2	6.9	A
		30	20
PD	Power Dissipation for Dual Operation	2		W
	Power Dissipation for Single Operation (Note 1a)                                                               (Note 1b)                                                               (Note 1c)	1.6
		1
		0.9
TJ, TSTG	Operating and Storage Temperature	-55 to 175

Description

The FDS6900S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.

The FDS6900S high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.