MOSFET SO-8 DUAL P-CH -20V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 6 A | ||
Resistance Drain-Source RDS (on) : | 0.024 Ohms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Symbol | Parameter | Ratings | Units |
VDSS | Drain-Source Voltage | -20 | V |
VGSS | Gate-Source Voltage | ±8 | V |
ID | Drain Current - Continuous (Note 1a) - Pulsed |
- 6 | A |
- 20 | |||
PD | Power Dissipation for Dual Operation (Note 1) |
2 | W |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
1.6 | ||
1 | |||
0.9 | |||
TJ, Tstg | Operating and Storage Junction Temperature Range | -55 to +150 | W |
Thermal Characteristics | |||
RJA | Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) |
78 | °C/W |
40 | |||
These FDS6875 P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices FDS6875 are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.
Technical/Catalog Information | FDS6875 |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 P-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 6A |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 6A, 4.5V |
Input Capacitance (Ciss) @ Vds | 2250pF @ 10V |
Power - Max | 2W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 31nC @ 5V |
Package / Case | SO-8 |
FET Feature | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS6875 FDS6875 FDS6875CT ND FDS6875CTND FDS6875CT |