FDS6699S

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 3.6 mOhms
Package / Case : SOIC-8 Narrow


Features:

21 A, 30 V Max RDS(ON)= 3.6 m@ VGS= 10 VMax 
                            RDS(ON)= 4.5 m@ VGS= 4.5 V
Includes SyncFET Schottky body diode
High performance trench technology for extremely lowRDS(ON)and fast switching
High power and current handling capability
100% RG(Gate Resistance) tested





Application

Synchronous Rectifier for DC/DC Converters
Notebook Vcore low side switch
Point of Load low side switch


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	+20	V
ID	Draint Current - Continuous (Note 1)	21	A
	- Pulsed	105
PD	Power Dissipation for Single Operation (Note 1a)	2.5	W
	(Note 1b)	1.4
	(Note 1c)	1
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +125	°C

Description

The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion  efficiency, providing a low R DS(ON)  and low gate charge. The FDS6699S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.

Parameters:

Technical/Catalog Information	FDS6699S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	3.6 mOhm @ 21A, 10V
Input Capacitance (Ciss) @ Vds	3610pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	91nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6699S FDS6699S