FDS6690AS

MOSFET 30V NCH POWER TRENCH SYNCFET

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SeekIC No. : 00148436 Detail

FDS6690AS: MOSFET 30V NCH POWER TRENCH SYNCFET

floor Price/Ceiling Price

US $ .3~.44 / Piece | Get Latest Price
Part Number:
FDS6690AS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 100~250
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  • $.44
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  • Processing time
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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.01 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 10 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

• 10 A, 30 V. RDS(ON) max= 12 m @ VGS = 10 V
                     RDS(ON) max= 15 m @ VGS = 4.5 V
• Includes SyncFET Schottky diode
• Low gate charge (16nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability



Application

• DC/DC converter
• Low side notebooks



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Draint Current - Continuous (Note 1)
10
A
- Pulsed
50
PD
Power Dissipation for Single Operation (Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C



Description

The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.




Parameters:

Technical/Catalog InformationFDS6690AS
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs12 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 910pF @ 15V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs23nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6690AS
FDS6690AS



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