MOSFET 30V NCH POWER TRENCH SYNCFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 10 A | ||
Resistance Drain-Source RDS (on) : | 0.01 Ohms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
30 |
V |
VGSS |
Gate-Source Voltage |
±20 |
V |
ID |
Draint Current - Continuous (Note 1) |
10 |
A |
- Pulsed |
50 | ||
PD |
Power Dissipation for Single Operation (Note 1a) |
2.5
|
W |
(Note 1b) |
1.2 | ||
(Note 1c) |
1 | ||
TJ, TSTG |
Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.
Technical/Catalog Information | FDS6690AS |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Rds On (Max) @ Id, Vgs | 12 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 910pF @ 15V |
Power - Max | 1W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 23nC @ 10V |
Package / Case | 8-SOIC |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS6690AS FDS6690AS |