MOSFET SO-8 SGL P-CH -30V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | - 8.8 A | ||
Resistance Drain-Source RDS (on) : | 0.02 Ohms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Symbol | Parameter | Ratings | Units |
VDSS | Drain-Source Voltage | -30 | V |
VGSS | Gate-Source Voltage | ±25 | V |
ID | Drain Current - Continuous (Note 1a) - Pulsed |
-8.8 | A |
-50 | |||
PD | Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
2.5 | W |
1.2 | |||
1 | |||
TJ, Tstg | Operating and Storage Junction Temperature Range | -55 to +150 | °C |
This FDS6685 P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices FDS6685 are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Technical/Catalog Information | FDS6685 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 8.8A |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 8.8A, 10V |
Input Capacitance (Ciss) @ Vds | 1604pF @ 15V |
Power - Max | 1W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 24nC @ 5V |
Package / Case | 8-SOIC |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS6685 FDS6685 |