FDS6681Z

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 20 A
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.0038 Ohms


Features:

• 20 A, 30 V. R_DS(ON) = 4.6 mΩ @ V_GS = 10 V
R_DS(ON) = 6.5 mΩ @ V_GS = 4.5 V
• Extended VGSS range (25V) for battery applications
• HBM ESD protection level of 8kV typical (note 3)
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability
• Termination is Lead-free and RoHS Compliant




Pinout






Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-30	V
VGSS	Gate-Source Voltage	±25	V
ID	Drain Current Continuous (Note 1a) Pulsed	-20	A
		-105
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1.0
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

This FDS6681Z P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench^® process that has been especially tailored to minimize the on-state resistance.

This device FDS6681Z is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

The FDS6681Z is a 30 Volt P-channel PowerTrench MOSFET.This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features of the FDS6681Z are:(1)extended VGSS range (25V) for battery applications; (2)HBM ESD protection level of 8kV typical (note 3); (3)high performance trench technology for extremely low RDS(ON); (4)high power and current handling capability; (5)termination is lead-free and RoHS compliant.This datasheet contains preliminary data, and supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

The absolute maximum ratings of the FDS6681Z can be summarized as:(1)gate-source voltage:±25V;(2)storage junction temperature range:-55 to 150;(3)operating junction temperature range:-55 to 150;(4)drain-source voltage:30V;(5)power dissipation:2.5 W.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

Parameters:

Technical/Catalog Information	FDS6681Z
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	4.6 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	7540pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	260nC @ 10V
Package / Case	SO-8
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6681Z FDS6681Z FDS6681ZTR ND FDS6681ZTRND FDS6681ZTR