FDS6678A

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 7.5 A
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.02 Ohms


Features:

• 7.5 A, 30 V. R_DS(ON) = 24 mΩ @ V_GS = 4.5 V
                      R_DS(ON) = 20 mΩ @ V_GS = 10 V
• High performance trench technology for extremely low R_DS(ON)
• Low gate charge (13 nC typical)
• High power and current handling capability


Application

• DC/DC converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a)                        Pulsed	7.5	A
		40
PD	Power Dissipation for Single Operation (Note 1a)                                                              (Note 1b)                                                              (Note 1c)	2.5	W
		1.2
		1.0
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS6678A N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_DS(ON) and fast switching speed.