MOSFET 30V NCH POWER TRENCH MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 14.5 A | ||
Resistance Drain-Source RDS (on) : | 0.007 Ohms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
30 |
V |
VGSS |
Gate-Source Voltage |
±20 |
V |
ID |
Drain Current Continuous (Note 1a) Pulsed |
14.5 |
A |
50 | |||
PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
2.5 |
W |
1.2 | |||
1.0 | |||
TJ, TSTG |
Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
Technical/Catalog Information | FDS6676AS |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 14.5A |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 14.5A, 10V |
Input Capacitance (Ciss) @ Vds | 2510pF @ 15V |
Power - Max | 1W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 63nC @ 10V |
Package / Case | SO-8 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS6676AS FDS6676AS |