FDS6675A

Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.013 Ohms
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : - 11 A


Features:

• 11 A, 30 V RDS(ON) = 13 m @ VGS = 10 V
RDS(ON) = 19 m @ VGS = 4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely ow RDS(ON)
• High power and current handling capability


Application

• Power management
• Load switch
• Battery protection


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-30	V
VGSS	Gate-Source Voltage	+25	V
ID	Draint Current - Continuous (Note 1)	-11	A
	- Pulsed	-50
PD	Power Dissipation for Single Operation (Note 1a)	2.5	W
	(Note 1b)	1.2
	(Note 1c)	1
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS6675A P-Channel MOSFET is a rugged gate version of airchild Semiconductor's advanced PowerTrench rocess. It has been optimized for power management pplications requiring a wide range of gate drive voltage atings (4.5V 25V).


Parameters:

Technical/Catalog Information	FDS6675A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	13 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	2330pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	34nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6675A FDS6675A