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FDS6612A

MOSFET SO-8 N-CH 30V

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SeekIC No. : 00163903 Detail

FDS6612A: MOSFET SO-8 N-CH 30V

FDS6612A Data Sheet

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Part Number:
FDS6612A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8.4 A
Resistance Drain-Source RDS (on) : 0.019 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 8.4 A
Resistance Drain-Source RDS (on) : 0.019 Ohms


Parameters:

Technical/Catalog InformationFDS6612A
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C8.4A
Rds On (Max) @ Id, Vgs22 mOhm @ 8.4A, 10V
Input Capacitance (Ciss) @ Vds 560pF @ 15V
Power - Max1W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs7.6nC @ 5V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6612A
FDS6612A
FDS6612ACT ND
FDS6612ACTND
FDS6612ACT



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