MOSFET SO-8
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | - 6.3 A | ||
Resistance Drain-Source RDS (on) : | 0.032 Ohms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Symbol | Parameter | Ratings | Units |
VDSS |
Drain-Source Voltage | -30 | V |
VGSS |
Gate-Source Voltage | ±20 | V |
ID |
Drain Current - Continuou (Note 1a) - Pulse |
-6.3 | A |
-40 | |||
PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
2.5 | W |
1.2 | |||
1.0 | |||
TJ ,TSTG |
Operating and Storage Junction Temperature Range | -55 to +150 |
This FDS6609A P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices FDS6609A are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Technical/Catalog Information | FDS6609A |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 6.3A |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 7A, 10V |
Input Capacitance (Ciss) @ Vds | 930pF @ 15V |
Power - Max | 1W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 29nC @ 10V |
Package / Case | 8-SOIC |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS6609A FDS6609A |