MOSFET SO-8 P-CH -20V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 11 A | ||
Resistance Drain-Source RDS (on) : | 0.014 Ohms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Symbol | Parameter | Ratings | Units |
VDSS |
Drain-Source Voltage | -00 | V |
VGSS |
Gate-Source Voltage | ±12 | V |
ID |
Drain Current - Continuou (Note 1a) - Pulse |
-11 | A |
-50 | |||
PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
2.5 | W |
1.2 | |||
1 | |||
TJ ,TSTG |
Operating and Storage Junction Temperature Range | -55 to +150 |
This FDS6576 P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductors advance PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
Technical/Catalog Information | FDS6576 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 11A |
Rds On (Max) @ Id, Vgs | 14 mOhm @ 11A, 4.5V |
Input Capacitance (Ciss) @ Vds | 4044pF @ 10V |
Power - Max | 1W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 60nC @ 4.5V |
Package / Case | 8-SOIC |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS6576 FDS6576 |