FDS6298

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.0074 Ohms


Features:

13 A, 30 V  R_DS(ON) = 9mΩ    @  V_GS = 10 V
                      R_DS(ON) = 12mΩ @ V_GS = 4.5 V
Low gate charge (10nC @ V_GS = 5 V)
Very low Miller Charge (3nC)
Low Rg (1 Ohm)
RoHS Compliant


Application

Control Switch for DC-DC Buck converters
Notebook Vcore
Telecom / Networking Point of Load


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 1a)                        Pulsed	13	A
		50
PD	Power Dissipation for Single Operation (Note 1a)                                                               (Note 1b)	3.0	W
		1.2
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

This FDS6298 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_DS(ON) and fast switching speed.


Parameters:

Technical/Catalog Information	FDS6298
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	9 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	1108pF @ 15V
Power - Max	1.2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	14nC @ 5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6298 FDS6298 FDS6298DKR ND FDS6298DKRND FDS6298DKR