FDS5672

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 12 A
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.0088 Ohms


Features:

r_DS(ON)  = 10mΩ , V_GS = 10V, I_D = 12A
r_DS(ON)  = 14mΩ , V_GS
6V, I_D = 10A
 High performance trench technology for extremely low r_DS(ON) 
Low gate charge
High power and current handling capability


Application

 DC/DC converters


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	60	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TA = 25oC, VGS = 10V, RJA = 55oC/W)	12	A
	Continuous (TA = 25 C, VGS = 5V, RJA = 55 C/W)	10	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy ( Note 1)	245	mJ
PD	Power dissipation	2.5	W
	Derate above 25oC	20	mW/oC
TJ, TSTG	Operating and Storage Temperature	-55 to 150	oC

Description

This FDS5672 N-Channel MOSFET has been designed specifically to  improve the overall efficiency of DC/DC converters using  either synchronous or conventional switching PWM  controllers.  It has been optimized for low gate charge, low r _DS(ON) and fast switching speed.


Parameters:

Technical/Catalog Information	FDS5672
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	10 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	2200pF @ 25V
Power - Max	2.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	45nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS5672 FDS5672 FDS5672CT ND FDS5672CTND FDS5672CT