FDS4675

Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.013 Ohms
Continuous Drain Current : 11 A
Drain-Source Breakdown Voltage : - 40 V


Features:

`  11 A, 40 V RDS(ON) = 0.013 W @ VGS = 10 V
                            RDS(ON) = 0.017 W @ VGS = 4.5 V
`  Fast switching speed
`  High performance trench technology for extremely low RDS(ON)
`  High power and current handling capability


Application

·  Power management
·  Load switch
·  Battery protection


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-40	V
VGSS	Gate-Source Voltage	+20	V
ID	Draint Current - Continuous (Note 1)	-11	A
	- Pulsed	-50
PD	Maximum Power Dissipation (Note 1a)	2.4 (steady state)	W
	(Note 1b)	1.4
	(Note 1c)	1.2
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

This FDS4675 P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 20V).

Parameters:

Technical/Catalog Information	FDS4675
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	13 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	4350pF @ 20V
Power - Max	1.2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	56nC @ 4.5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS4675 FDS4675 FDS4675DKR ND FDS4675DKRND FDS4675DKR