FDS4559_F085

Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : +/- 60 V
Continuous Drain Current : 4.5 A, - 3.5 A
Resistance Drain-Source RDS (on) : 55 m Ohms, 105 m Ohms


Specifications

      

Product	Product status	Eco Status	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDS4559_F085	Preliminary	RoHS Compliant	SO-8	8	TAPE REEL		Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &2 (2-Digit Date Code) &K Line 2: FDS Line 3: 4559

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Description

This complementary MOSFET device FDS4559_F085 is produced usingFairchild's advanced PowerTrench process that hasbeen especially tailored to minimize the on-stateresistance and yet maintain low gate charge forsuperior switching performance.

Parameters:

Technical/Catalog Information	FDS4559_F085
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	4.5A, 3.5A
Rds On (Max) @ Id, Vgs	55 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	650pF @ 25V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	18nC @ 10V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS4559_F085 FDS4559_F085