FDS4488

MOSFET SO-8

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FDS4488 Picture
SeekIC No. : 00156893 Detail

FDS4488: MOSFET SO-8

floor Price/Ceiling Price

US $ .18~.21 / Piece | Get Latest Price
Part Number:
FDS4488
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 2500~5000
  • Unit Price
  • $.21
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 7.9 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 7.9 A
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

`  7.9 A, 30 V. RDS(ON) = 22 mW @ VGS = 10 V
RDS(ON) = 30 mW @ VGS = 4.5 V
`  Low gate charge (9.5 nC typical)
`  High performance trench technology for extremely low RDS(ON)
`  High power and current handling capability



Application

·  DC/DC converter
·  Load switch
·  Motor drives



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS


Drain-Source Voltage

30

V
VGSS
Gate-Source Voltage
±25
V
ID
Drain Current Continuous (Note 1a)
                      Pulsed
7.9
A
40

PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
2.5
W
1.2
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +175
°C



Description

This N-Channel MOSFET FDS4488 is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices FDS4488 are well suited for low voltage and battery powered applications where low inline power loss and fast switching are required.


Parameters:

Technical/Catalog InformationFDS4488
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C7.9A
Rds On (Max) @ Id, Vgs22 mOhm @ 7.9A, 10V
Input Capacitance (Ciss) @ Vds 927pF @ 15V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs13nC @ 5V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS4488
FDS4488



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